technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung v ces 1200 v collector-emitter voltage kollektor-dauergleichstrom t c = 80c i c,nom. 800 a dc-collector current t c = 25 c i c 1200 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 1600 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 6,9 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 800 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 1600 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 ta 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2.500 v charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 800 a, v ge = 15v, tvj = 25c v ce sat - 3,00 - v collector-emitter saturation voltage i c = 800 a, v ge = 15v, t vj = 125c - 3,60 - v gate-schwellenspannunggate threshold voltage i c = 32 ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -52-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - t.b.d. - nf gateladung gate charge v ge = -15v ... + 15v, v ce = 600v q g - 8,4 - c kollektor-emitter reststrom v ce = 1200v, v ge = 0v, t vj = 25c i ces - t.b.d. - a collector-emitter cut-off current v ce = 1200v, v ge = 0v, t vj = 125c - t.b.d. - ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: r. j?rke date of publication : 2000-06-14 approved by: jens thurau revision: 1 185.000 1 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 800 a, v cc = 600v turn on delay time (inductive load) v ge = 15v, r g = 1,3 w , t vj = 25c t d,on - 100 - ns v ge = 15v, r g = 1,3 w , t vj = 125c - 125 - ns anstiegszeit (induktive last) i c = 800 a, v cc = 600v rise time (inductive load) v ge = 15v, r g = 1,3 w , t vj = 25c t r -90-ns v ge = 15v, r g = 1,3 w , t vj = 125c - 100 - ns abschaltverz?gerungszeit (ind. last) i c = 800 a, v cc = 600v turn off delay time (inductive load) v ge = 15v, r g = 1,3 w , t vj = 25c t d,off - 530 - ns v ge = 15v, r g = 1,3 w , t vj = 125c - 590 - ns fallzeit (induktive last) i c = 800 a, v cc = 600v fall time (inductive load) v ge = 15v, r g = 1,3 w , t vj = 25c t f -60-ns v ge = 15v, r g = 1,3 w , t vj = 125c -70-ns einschaltverlustenergie pro puls i c = 800 a, v cc = 600v, v ge = 15v turn-on energy loss per pulse r g = 1,3 w , t vj = 125c, l s = 60nh e on - 76 - mws abschaltverlustenergie pro puls i c = 800 a, v cc = 600v, v ge = 15v turn-off energy loss per pulse r g = 1,3 w , t vj = 125c, l s = 60nh e off - 64 - mws kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc = 900v, v cemax =v ces -l sce di/dt i sc - 6000 - a modulinduktivit?t stray inductance module l sce - 12 - nh modul-leitungswiderstand, anschlsse - chip lead resistance, terminals - chip r cc'+ee' - t.b.d. - m w charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 800 a, v ge = 0v, t vj = 25c v f - 2,00 - v forward voltage i f = 800 a, v ge = 0v, t vj = 125c - 1,70 - v rckstromspitze i f = 800 a, - di f /dt = 8200 a/sec peak reverse recovery current v r = 600v, vge = -10v, t vj = 25c i rm - 540 - a v r = 600v, vge = -10v, t vj = 125c - 900 - a sperrverz?gerungsladung i f = 800 a, - di f /dt = 8200 a/sec recovered charge v r = 600v, vge = -10v, t vj = 25c q r - 60 - as v r = 600v, vge = -10v, t vj = 125c - 160 - as abschaltenergie pro puls i f = 800 a, - di f /dt = 8200 a/sec reverse recovery energy v r = 600v, vge = -10v, t vj = 25c e rec - 32 - mws v r = 600v, vge = -10v, t vj = 125c - 76 - mws 2 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,018 k/w thermal resistance, junction to case diode/diode, dc - - 0,027 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module l paste = 1 w/m*k / l grease = 1 w/m*k r thck - 0,008 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 150 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix material modulgrundplatte material of module baseplate cu innere isolation internal insulation aln kriechstrecke creepage distance 32,2 mm luftstrecke clearance 19,1 mm cti comperative tracking index > 400 anzugsdrehmoment f. mech. befestigung m1 4,25 5,75 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m4 m2 1,7 2,3 nm terminal connection torque terminals m8 8 10,00 nm gewicht weight g 1000 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data i c [a] v ce [v] i c [a] v ce [v] 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 t = 25c t = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data i c [a] v ge [v] i f [a] v f [v] 0 200 400 600 800 1000 1200 1400 1600 56789101112 t = 25c t = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 200 400 600 800 1000 1200 1400 1600 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 tj = 25c tj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data e [mj] i c [a] e [mj] r g [ w ] 0,0 50,0 100,0 150,0 200,0 250,0 0 200 400 600 800 1000 1200 1400 1600 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r g,on = 1,3 w, r g,off = 1,3 w , v ce = 600v, t j = 125c 0 50 100 150 200 250 300 350 400 450 012345678 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 800 a , v ce = 600v , t j = 125c 6 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data i c [a] v ce [v] 0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip sicherer arbeitsbereich igbt (rbsoa) r g,off = 1,3 w , t vj = 125c reverse bias safe operation area igbt (rbsoa) 7 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 3,85 5,68 6,15 2,32 t i [sec] : igbt 0,0064 0,0493 0,0916 1,5237 r i [k/kw] : diode 5,78 8,52 9,22 3,48 t i [sec] : diode 0,0064 0,0493 0,0916 1,5237 transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,0001 0,001 0,01 0,1 0,001 0,01 0,1 1 10 zth:igbt zth:diode 8 (9) FZ800R12KS4, preliminary.xls 15.06.00
technische information / technical information igbt-module igbt-modules fz 800 r12 ks4 vorl?ufige daten preliminary data geh?usema?e / schaltbild package outline / circuit diagram 9 (9) FZ800R12KS4, preliminary.xls 15.06.00
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